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? AUIRLL024Z v dss 55v r ds(on) typ. 48m ?? i d 5.0a max. 60m ?? description specifically designed for automoti ve applications, this hexfet? power mosfet utilizes the late st processing techniques to achieve extremely low on-resistan ce per silicon area. additional features of this design are a j unction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. features ? advanced process technology ? ultra low on-resistance ? logic level gate drive ? 150c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * 1 2015-10-29 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v ? 5.0 a ? i d @ t a = 70c continuous drain current, v gs @ 10v ? 4.0 i dm pulsed drain current ? 40 p d @t a = 25c maximum power dissipation (pcb mount) ? 2.8 w p d @t a = 25c maximum power dissipation (pcb mount) ? 1.0 linear derating factor (pcb mount) ? 0.02 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy (thermally limited) ? 21 e as (tested) single pulse avalanche energy (tested value) ? 38 i ar avalanche current ? see fig. 12a, 12b, 15, 16 a e ar repetitive avalanche energy ? mj t j operating junction and -55 to + 150 c ? t stg storage temperature range mj absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units c/w r ? ja junction-to-ambient (pcb mount, steady state) ? ??? 45 r ? ja junction-to-ambient (pcb mount, steady state) ? ??? 120 s g sot-223 AUIRLL024Z d base part number package type standard pack orderable part number form quantity AUIRLL024Z sot-223 tape and reel 2500 AUIRLL024Ztr g d s gate drain source d hexfet ? power mosfet
? AUIRLL024Z 2 2015-10-29 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? limited by t jmax , starting t j = 25c, l = 4.8mh, r g = 25 ? , i as = 3.a. v gs = 10v.part not recommended for use above this value. ? pulse width ?? 1.0ms; duty cycle ? 2%. ? c oss eff . is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ? this value determined from sample failure population, starting t j = 25c, l = 4.8mh, r g = 25 ? , i as = 3.0a, v gs =10v. ?? when mounted on 1 inch square copper board. ? when mounted on fr-4 board using minimum recommended footprint. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.049 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 48 60 v gs = 10v, i d = 3.0a ? ??? ??? 80 v gs = 5.0v, i d = 3.0a ? ??? ??? 100 v gs = 4.5v, i d = 3.0a ? v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a gfs forward trans conductance 7.5 ??? ??? s v ds = 25v, i d = 3.0a i dss drain-to-source leakage current ??? ??? 20 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 55v,v gs = 0v,t j = 125c i gss gate-to-source forward leakage ??? ??? 200 na v gs = 16v gate-to-source reverse leakage ??? ??? -200 v gs = -16v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 7.0 11 nc ? i d = 3.0a q gs gate-to-source charge ??? 1.5 ??? v ds = 44v q gd gate-to-drain charge ??? 4.0 ??? v gs = 5.0v ? t d(on) turn-on delay time ??? 8.6 ??? ns v dd = 28v t r rise time ??? 33 ??? i d = 3.0a t d(off) turn-off delay time ??? 20 ??? r g = 56 ?? t f fall time ??? 15 ??? v gs = 5.0v ? c iss input capacitance ??? 380 ??? pf ? v gs = 0v c oss output capacitance ??? 66 ??? v ds = 25v c rss reverse transfer capacitance ??? 36 ??? ? = 1.0mhz diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 5.0 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 40 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 3.0a,v gs = 0v ?? t rr reverse recovery time ??? 15 23 ns t j = 25c ,i f = 3.0a, v dd = 28v q rr reverse recovery charge ??? 9.1 14 nc di/dt = 100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) m ????? c oss output capacitance ??? 220 ??? v gs = 0v, v ds = 1.0v,? = 1.0mhz c oss output capacitance ??? 53 ??? v gs = 0v, v ds = 44v,? = 1.0mhz c oss eff. effective output capacitance ??? 93 ??? v gs = 0v, v ds = 0v to 44v ?
? AUIRLL024Z 3 2015-10-29 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 typical forward trans conductance vs. drain current fig. 1 typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 9.0v 7.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v ? 60s pulse width tj = 25c 3.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.0v ? 60s pulse width tj = 150c vgs top 10v 9.0v 7.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v 0 2 4 6 8 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width 024681012 i d ,drain-to-source current (a) 0 2 4 6 8 10 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 150c v ds = 10v 300s pulse width
? AUIRLL024Z 4 2015-10-29 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 012345678 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v v ds = 28v v ds = 11v i d = 3.0a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-to-drain voltage (v) 0 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1.0 10 100 1000.0 v ds , drain-to-source voltage (v) 0.0001 0.001 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse dc
? AUIRLL024Z 5 2015-10-29 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 3.0a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) ? i (sec) ? 5.3396 0.000805 19.771 20.80000 19.881 0.706300 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? c ? c ci= ? i ? ri ci= ? i ? ri
? AUIRLL024Z 6 2015-10-29 fig 12a. unclamped inductive test circuit fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 13b. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 13a. basic gate charge waveform fig 14. threshold voltage vs. temperature 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.0a 0.80a bottom 0.69a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a
? AUIRLL024Z 7 2015-10-29 fig 15. typical avalanche current vs. pulse width fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.infineon.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 starting t j , junction temperature (c) 0 5 10 15 20 25 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 3.0a
? AUIRLL024Z 8 2015-10-29 fig 18a. switching time test circuit fig 18b. switching time waveforms fig 17 . peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets
? AUIRLL024Z 9 2015-10-29 ? sot-223(to-261aa) part marking information sot-223 (to-261aa) package outline (dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ll024z date code y= year ww= work week a= automotive, lead free
? AUIRLL024Z 10 2015-10-29 sot-223(to-261aa) tape and reel ( dimensions are shown in millimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4 note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? AUIRLL024Z 11 2015-10-29 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level sot-223 msl1 esd machine model class m1b (+/- 100v) ? aec-q101-002 human body model ? class h0 (+/- 250v) ? aec-q101-001 charged device model class c5 (+/- 1125v) ? aec-q101-005 rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 10/29/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. 3/26/2014 ?? added "logic level gate drive" bullet in the features section on page 1 ?? updated part marking on page 9 ?? updated data sheet with new ir corporate template ? highest passing voltage.

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